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APTC90AM60SCTG
Phase leg Series & SiC parallel diodes Super Junction MOSFET Power Module
NTC2 VBUS Q1
VDSS = 900V RDSon = 60m max @ Tj = 25C ID = 59A @ Tc = 25C
Application * Motor control * Switched Mode Power Supplies * Uninterruptible Power Supplies Features * * Ultra low RDSon Low Miller capacitance Ultra low gate charge Avalanche energy rated
.
G1 OUT S1 Q2
G2
Parallel SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF Kelvin source for easy drive Very low stray inductance - Symmetrical design - Lead frames for power connections Internal thermistor for temperature monitoring High level of integration Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile RoHS Compliant Max ratings 900 59 44 150 20 60 462 8.8 2.9 1940 Unit V A V m W A mJ
August, 2009 1-6 APTC90AM60SCTG - Rev 0
0/VBU S S2 NTC1
* * * * Benefits * * * * * *
OUT VBUS OUT
0/VBUS
S1 G1
S2 G2
NTC2 NTC1
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy
Tc = 25C Tc = 80C
Tc = 25C
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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APTC90AM60SCTG
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current Test Conditions
VGS = 0V,VDS = 900V VGS = 0V,VDS = 900V
Min Tj = 25C Tj = 125C 2.5
Typ 1000 50 3
Max 200 60 3.5 200
Unit A m V nA
VGS = 10V, ID = 52A VGS = VDS, ID = 6mA VGS = 20 V, VDS = 0V
Dynamic Characteristics
Symbol Characteristic Ciss Input Capacitance Coss Output Capacitance Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGS = 0V ; VDS = 100V f = 1MHz VGS = 10V VBus = 400V ID = 52A Inductive Switching (125C) VGS = 10V VBus = 600V ID = 52A RG = 3.8 Inductive switching @ 25C VGS = 10V ; VBus = 600V ID = 52A ; RG = 3.8 Inductive switching @ 125C VGS = 10V ; VBus = 600V ID = 52A ; RG = 3.8 Min Typ 13.6 0.66 540 64 230 70 20 400 25 1.8 1.5 2.52 1.7 mJ ns nC Max Unit nF
mJ
Series diode ratings and characteristics
Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage IF = 60A IF = 120A IF = 60A IF = 60A VR = 133V di/dt = 400A/s Test Conditions VR=200V Tj = 25C Tj = 125C Tc = 85C Min 200 Typ Max 350 600 60 1.1 1.4 0.9 24 48 66 300 1.15 V Unit V A A
Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
Qrr
Reverse Recovery Charge
nC
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APTC90AM60SCTG - Rev 0
August, 2009
trr
Reverse Recovery Time
ns
APTC90AM60SCTG
SiC parallel diode ratings and characteristics
Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF QC C Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Total Capacitive Charge Total Capacitance IF = 20A Test Conditions VR=1200V Tj = 25C Tj = 175C Tc = 100C Tj = 25C Tj = 175C Min 1200 Typ 64 112 20 1.6 2.3 80 192 138 Max 400 2000 1.8 3 Unit V A A V nC pF
IF = 20A, VR = 600V di/dt =1000A/s f = 1MHz, VR = 200V f = 1MHz, VR = 400V
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Transistor Series diode 4000 -40 -40 -40 2.5 Min Typ Max 0.27 0.65 1 150 125 100 4.7 160 Unit
C/W
SiC Parallel diode RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
V C N.m g
Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight
To Heatsink
M5
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol R25 R25/R25 B25/85 B/B Characteristic Resistance @ 25C T25 = 298.15 K TC=100C
RT = R25 1 1 RT: Thermistor value at T exp B25 / 85 T - T 25
T: Thermistor temperature
Min
Typ 50 5 3952 4
Max
Unit k % K %
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3-6
APTC90AM60SCTG - Rev 0
August, 2009
APTC90AM60SCTG
SP4 Package outline (dimensions in mm)
ALL DIMENSIONS MARKED " * " ARE TOLERENCED AS :
See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com
Typical CoolMOS Performance Curve
400
ZVS
RDS(on), Drain to Source ON resistance (Normalized)
Operating Frequency vs Drain Current
VDS=600V D=50% RG=3.8 TJ=125C TC=75C
ON resistance vs Temperature 3.0 2.5 2.0 1.5 1.0 0.5 25 50 75 100 125 150 TJ, Junction Temperature (C) Switching Energy vs Gate Resistance
Frequency (kHz)
300 200 100 0 20 25 30 35 40
Hard switching
ZCS
45
50
ID, Drain Current (A)
Switching Energy vs Current 4 Eon and Eoff (mJ) 3 2 1 0 10 20 30 40 50 60 ID, Drain Current (A) 70 80
VDS=600V RG=3.8 TJ=125C L=100H Eon
6 Switching Energy (mJ)
4 3 2 1 0 0
Eon
Eoff
5
10
15
20
Gate Resistance (Ohms)
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4-6
APTC90AM60SCTG - Rev 0
VDS=600V ID=52A TJ=125C L=100H
August, 2009
5
Eoff
APTC90AM60SCTG
0.3 Thermal Impedance (C/W) 0.25 0.2 0.15 0.1 0.05 Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.9 0.7 0.5 0.3 0.1 0.05
Single Pulse
0 0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics
VGS=20, 8V
160
6V
BVDSS, Drain to Source Breakdown Voltage
240 ID, Drain Current (A)
Breakdown Voltage vs Temperature 1000 975 950 925 900 25 50 75 100 125 TJ, Junction Temperature (C) DC Drain Current vs Case Temperature 60 ID, DC Drain Current (A) 50 40 30 20 10 0
5V
80
0 0 5 10 15 VDS, Drain to Source Voltage (V) Maximum Safe Operating Area 1000 ID, Drain Current (A) 20
100
limited by RDSon
100 s
10
Single pulse TJ=150C TC=25C 1 10 100
10 ms
1 1000 VDS, Drain to Source Voltage (V) Capacitance vs Drain to Source Voltage Ciss C, Capacitance (pF) 10000 1000 100 10 1 0 25 50 75 100 125 150 175 200 VDS, Drain to Source Voltage (V) Crss Coss VGS, Gate to Source Voltage (V) 100000 10 8 6 4 2 0
25
50 75 100 125 TC, Case Temperature (C)
150
Gate Charge vs Gate to Source Voltage VDS=400V ID=52A TJ=25C
0
100
200 300 400 Gate Charge (nC)
500
600
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5-6
APTC90AM60SCTG - Rev 0
August, 2009
APTC90AM60SCTG
Typical parallel SiC Diode Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 1.2 Thermal Impedance (C/W) 1 0.8 0.6 0.4 0.2 0.9 0.7 0.5 0.3 0.1 0.05 0.0001 0.001 Single Pulse 0.01 0.1 1 10
0 0.00001
Rectangular Pulse Duration (Seconds) Forward Characteristics
TJ=25C
Reverse Characteristics 200 IR Reverse Current (A)
40
IF Forward Current (A)
30 20
TJ=75C
150
100
TJ=125C
TJ=75C TJ=125C TJ=175C TJ=25C
10 0 0 0.5 1 1.5 2
TJ=175C
50
2.5
3
3.5
0 400
600
VF Forward Voltage (V) Capacitance vs.Reverse Voltage
800 1000 1200 1400 1600 VR Reverse Voltage (V)
1400 C, Capacitance (pF) 1200 1000 800 600 400 200 0
August, 2009 APTC90AM60SCTG - Rev 0
1
10 100 VR Reverse Voltage
1000
"COOLMOSTM comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trademark of Infineon Technologies AG". Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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